Optical signatures of deep level defects in Ga2O3
Abstract
We used depth-resolved cathodoluminescence spectroscopy and surface photovoltage spectroscopy to measure the effects of near-surface plasma processing and neutron irradiation on native point defects in β-Ga2O3. The near-surface sensitivity and depth resolution of these optical techniques enabled us to identify spectral changes associated with removing or creating these defects, leading to identification of one oxygen vacancy-related and two gallium vacancy-related energy levels in the β-Ga2O3 bandgap. The combined near-surface detection and processing of Ga2O3 suggests an avenue for identifying the physical nature and reducing the density of native point defects in this and other semiconductors.
- Publication:
-
Applied Physics Letters
- Pub Date:
- June 2018
- DOI:
- 10.1063/1.5026770
- Bibcode:
- 2018ApPhL.112x2102G