Telecom wavelength single quantum dots with very small excitonic fine-structure splitting
Abstract
We report on molecular beam epitaxy growth of symmetric InAs/InP quantum dots (QDs) emitting at a telecom C-band (1.55 μm) with an ultra-small excitonic fine-structure splitting of ∼2 μeV. The QDs are grown on a distributed Bragg reflector (DBR) and systematically characterized by micro-photoluminescence (μ-PL) measurements. One order of magnitude of QD PL intensity enhancement is observed in comparison to the samples without DBR. A combination of power-dependent and polarization-resolved measurements reveals background-free exciton, biexciton, and dark exciton emission with a resolution-limited linewidth below 35 μeV and a biexciton binding energy of ∼1 meV. The results are confirmed by statistical measurements of about 20 QDs.
- Publication:
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Applied Physics Letters
- Pub Date:
- April 2018
- DOI:
- 10.1063/1.5023184
- arXiv:
- arXiv:1801.06985
- Bibcode:
- 2018ApPhL.112q2102K
- Keywords:
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- Physics - Applied Physics;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 15 pages, 4 figures