A novel route to hole-doping epitaxial thin films: Sr2-xKxIrO4
Abstract
The layered, two-dimensional antiferromagnetic insulator Sr2IrO4 has been the subject of intense investigation, in large part due to its strong similarity to the prototypical layered parent cuprate La2CuO4. As both electron and hole doping the parent cuprates result in high-temperature superconductivity, carrier doping Sr2IrO4 has likewise been an important goal in the study of layered iridates. While the electron-doped side of Sr2IrO4 (either by surface K doping or La substitution) has been well explored, the hole-doped side of the phase diagram has been less studied. While substituting Rh on the Ir has been shown to result in hole-doping, this also induces significant disorder to the IrO2 planes. Here, we present a new method to synthesize hole-doped Sr2-xKxIrO4 by a combination of reactive oxide molecular beam epitaxy utilizing K substitution for Sr which induces much less disorder, resulting in well-defined quasiparticle bands and allowing us to observe a clear hole-doped Fermi surface topology with an intrinsic momentum-dependent pseudogap.
- Publication:
-
APS March Meeting Abstracts
- Pub Date:
- 2018
- Bibcode:
- 2018APS..MARX10006N