InxGa1-xN nucleation by In+ ion implantation into GaN
Abstract
In+ ion implantation was performed into a GaN epi-layer with dose and energy of 5 × 1015 cm-2 and 25 keV respectively. After implantation, a thermal annealing process was employed and then the characterization was carried out by HRXRD, Raman spectroscopy, STEM, SIMS, XPS, and Photoluminescence. The maximum Indium concentration was measured by SIMS reaching to an atomic concentration of 3%. The HRXRD revealed the formation of InxGa1-xN with a variable distribution of Indium due to the implantation profile. The nucleation of InxGa1-xN was confirmed by the observation of interplanar spacings of 0.267 nm. The Photoluminescence analysis showed a modification of GaN spectra as a function of annealing temperature with an interesting green emission for samples annealed at 500 °C. The green emission is explained by the formation of InxGa1-xN with x value as high as 0.32 within rich Indium regions.
- Publication:
-
Nuclear Instruments and Methods in Physics Research B
- Pub Date:
- December 2017
- DOI:
- 10.1016/j.nimb.2017.10.013
- Bibcode:
- 2017NIMPB.413...62H
- Keywords:
-
- In+ Ion implantation;
- GaN;
- In<SUB>x</SUB>Ga<SUB>1-x</SUB>N