Transport Properties of Hydrogen-Terminated Silicon Surface Controlled by Ionic-Liquid Gating
Abstract
We fabricated electric double-layer transistors on the hydrogen-terminated (111)-oriented surface of non-doped silicon using ionic liquid as a gate dielectric. We introduced hole carriers into silicon with the application of a negative gate voltage. The sheet resistance of silicon was controlled by more than three orders of magnitude at 220 K by changing the gate voltage. The temperature dependence of sheet resistance became weak as the gate voltage was increased, suggesting the approach to an insulator-metal transition.
- Publication:
-
Journal of the Physical Society of Japan
- Pub Date:
- January 2017
- DOI:
- 10.7566/JPSJ.86.014703
- Bibcode:
- 2017JPSJ...86a4703S