Ferromagnetic Properties of Five-Period InGaMnAs/GaAs Quantum Well Structure
Abstract
The effect of Mn was investigated in a synthesized multilayer system made up of five layers of InMnGaAs/GaAs quantum well (QW) grown on semi-insulating (100)-oriented substrates prepared by low-temperature molecular beam epitaxy. Magnetic moment measurements on a superconducting quantum interference device magnetometer revealed the presence of ferromagnetism with a Curie temperature above room temperature in a five-layer InGaMnAs/GaAs QW structure in a GaAs matrix. X-ray diffraction and secondary ion mass spectroscopy measurements powerfully confirmed the second phase founding of ferromagnetic GaMn and MnAs clusters. The ferromagnetism existing in five layers of InMnGaAs/GaAs QW is not intrinsic, but extrinsic due to the presence of Mn dopant clusters such as GaMn and MnAs clusters.
- Publication:
-
Journal of Electronic Materials
- Pub Date:
- July 2017
- DOI:
- 10.1007/s11664-016-5036-x
- Bibcode:
- 2017JEMat..46.3917K
- Keywords:
-
- Quantum wells;
- ferromagnetism;
- clusters;
- molecular beam epitaxy