Significant reduction in the leakage current of Cr-doped GaFeO3 synthesized by sol-gel method
Abstract
In this manuscript, we synthesize the GaFe1-xCrxO3 (0 ≤ x ≤0.15) polycrystalline samples using sol-gel technique. Rietveld refinement of X-ray diffraction data and Raman spectroscopic studies reveal the presence of orthorhombic structure with no evidence of any secondary phase in Cr-doped GaFeO3 samples albeit with a reduction in the lattice constant and unit cell volume upon incorporation of Cr3+ at B-site of GaFeO3. SEM studies reveal the decrease in particle size with Cr doping. Leakage current decreases by an order of magnitude with Cr doping because of reduction in the hopping conduction mechanism between Fe3+ and Fe2+. Temperature-dependent magnetic measurements show a reduction in the Curie temperature (Tc) and magnetization values with gradual incorporation of Cr content in GaFeO3 lattice.
- Publication:
-
Applied Physics A: Materials Science & Processing
- Pub Date:
- August 2017
- DOI:
- 10.1007/s00339-017-1159-z
- Bibcode:
- 2017ApPhA.123..536S