Heusler B2-Co2MnSi-based spin valves on silicon
Abstract
The Heusler alloy Co2MnSi with a B2- or L21-order has attracted a great deal of attention in the field of spintronics due to the half metallicity of the fully ordered structure. There have been extensive reports on the epitaxial growth and the high spin polarization of Co2MnSi films on MgO substrates. However, in order to be compatible with current CMOS techniques, the potential magnetic memories application requires spin valve or magnetic tunneling junction stacks that can be integrated onto silicon. So far, the growth of B2- or L21-ordered Co2MnSi on silicon has remained challenging. Here we report on the growth of (001)-orientated B2-Co2MnSi films sputtered on oxidized silicon wafers as well as their application in spin valve devices where the structural and magnetic properties of the B2-Co2MnSi films were optimized by varying the post-annealing temperature and Mn atomic concentration. We will also report on the effects of post-annealing and variation of the Mn-composition on the giant magnetoresistance behavior of current-perpendicular-to-plane spin valves that utilize the B2-Co2MnSi electrodes.
- Publication:
-
APS March Meeting Abstracts
- Pub Date:
- March 2017
- Bibcode:
- 2017APS..MARC47011Z