LNL irradiation facilities for radiation damage studies on electronic devices

In this paper we will review the wide range of irradiation facilities installed at the INFN Legnaro National Laboratories and routinely used for radiation damage studies on silicon detectors, electronic components and systems. The SIRAD irradiation facility, dedicated to Single Event Effect (SEE) and bulk damage studies, is installed at the 14MV Tandem XTU accelerator and can deliver ion beams from H up to Au in the energy range from 28MeV to 300MeV. An Ion Electron Emission Microscope, also installed at SIRAD, allows SEE testing with micrometric sensitivity. For total dose tests, two facilities are presently available: an X-rays source and a ⁶⁰Co γ -ray source. The 7MV Van de Graaff CN accelerator provides ¹H beams in the energy range 2-7MeV and currents up to few μA for both total dose and bulk damage studies. At this facility, very high dose rates (up to ∼ 100 krad/s (SiO₂)) can be achieved. Finally, also neutron beams are available, produced at the CN accelerator, by the reaction d + Be ⇒ n + B.