Optical characterization of the PtSi/Si by using spectroscopic ellipsometry
Abstract
We report an optical characterization of PtSi films for thermoelectric device applications which was done by using nondestructive spectroscopic ellipsometry (SE). A Pt monolayer and a Pt-Si multilayer which consisted of three pairs of Pt and Si layers were deposited on p-doped-silicon substrates by using sputtering method; then, rapid annealing process was done to form PtSi films through intermixing of Pt and Si atoms at the interface. Pseudodielectric function data < ɛ > = < ɛ 1 > + i < ɛ 2 > for the PtSi/Si samples were obtained from 1.12 to 6.52 eV by using spectroscopic ellipsometry. Employing the Tauc-Lorentz and the Drude models, determined the dielectric function ( ɛ) of the PtSi films. We found that the composition ratio of Pt:Si was nearly 1:1 for the PtSi monolayer and we observed transitions between occupied and unoccupied states in the Pt 5 d states. We also observed the formation of PtSi layers in the Pt-Si multilayer sample. The SE results were confirmed by the transmission electron microscopy and energy dispersive X-ray spectroscopy.
- Publication:
-
Journal of Korean Physical Society
- Pub Date:
- August 2016
- DOI:
- 10.3938/jkps.69.291
- arXiv:
- arXiv:1606.03767
- Bibcode:
- 2016JKPS...69..291L
- Keywords:
-
- PtSi;
- Dielectric function;
- Nondestructive;
- Condensed Matter - Materials Science
- E-Print:
- 18 pages, 10 figures, ICAMD 2015 conference