Study of GaN doping with carbon from propane in a wide range of MOVPE conditions
Abstract
Complex studies of intentional GaN carbon doping from propane during MOVPE were performed in a wide range of growth conditions. A strong dependence of carbon doping efficiency on growth rate and ammonia flow is revealed, while dependence of carbon doping efficiency on reactor pressure is small. Atomic force microscopy confirms the good quality of the GaN:C layers for doping levels as high as 2*1019 cm-3 grown with growth rate up to 45 μm/h. The dependence of carbon incorporation into GaN is proportional to the propane concentration to the power 3/2 in most growth regimes, but for very high growth rate a linear or sub-linear component of the dependence becomes prominent.
- Publication:
-
Journal of Crystal Growth
- Pub Date:
- September 2016
- DOI:
- 10.1016/j.jcrysgro.2016.06.002
- Bibcode:
- 2016JCrGr.449..108L
- Keywords:
-
- A1. Doping;
- A3. Metalorganic vapor phase epitaxy;
- B1. Nitrides;
- B2. Semiconducting gallium compounds