Field effect in perovskite heterostructures based on BaSnO3 and BaHfO3
Abstract
Perovskite La-doped BaSnO3 (BLSO) was reported to possess high electron mobility and excellent oxygen stability. We fabricated a field effect transistor on SrTiO3 substrate using BLSO as a channel layer and BaHfO3 (BHO) as a gate insulator. To reduce the threading dislocations and enhance the electrical properties of the channel, undoped BaSnO3 (BSO) buffer layer was grown on SrTiO3 substrates before the channel layer deposition. X-ray diffraction measurement confirms the epitaxial growth of BHO on BSO. We investigated optical and dielectric properties of the BHO gate insulator; the optical bandgap and the dielectric constant were measured to be 6.1 eV and 37.8, respectively. Using BHO as the gate insulator, we obtained the conductivity modulation in the channel by field effect. We will report on the electrical properties of the field effect transistor such as the output characteristics, the transfer characteristics, the Ion/Ioff ratio, the subthreshold swing and the field effect mobility.
- Publication:
-
APS March Meeting Abstracts
- Pub Date:
- 2016
- Bibcode:
- 2016APS..MARC51010K