Single-crystal GaN/AlN layers on CVD diamond
Abstract
Original approach to fabricating a GaN/AlN/nanocrystalline diamond structure has been suggested and implemented. The stages of deposition of a structure of this kind include the following: (a) growth of nanocrystalline CVD-diamond on single-crystal AlN (preliminarily grown on a silicon substrate), (b) etch removal of the silicon substrate, and (c) growth of single-crystal GaN on the surface of single-crystal AlN. Single-crystal gallium nitride with a width of the X-ray rocking curve for the (0002) reflection of 0.35° was obtained on a nanocrystalline-diamond substrate.
- Publication:
-
Technical Physics Letters
- Pub Date:
- October 2015
- DOI:
- 10.1134/S1063785015100065
- Bibcode:
- 2015TePhL..41..954K