Growth kinetics of induced domains in Ba0.8Sr0.2TiO3 ferroelectric thin films
Abstract
The possibility of the formation of stable domain states in Ba0.8Sr0.2TiO3 films on the initial surface and in a preliminarily polarized region of the film has been demonstrated using piezoresponse force microscopy. The velocity of lateral motion of a domain wall, coercive field, minimal domain size, and recording time for the domain formation under the applied voltage have been calculated.
- Publication:
-
Physics of the Solid State
- Pub Date:
- June 2015
- DOI:
- 10.1134/S1063783415060189
- Bibcode:
- 2015PhSS...57.1151K