Effect of pressure on the intermediate-valence semiconductor SmB6: 11B-NMR
Abstract
We report the first high-pressure 11B-NMR studies above 3 GPa on the intermediate-valence semiconductor SmB6. A 11B-NMR line obtained at 4.9 GPa, the highest pressure for the measurements, and at 1.9 K shows quite similar a line shape to that at ambient pressure, indicating no structural or magnetic phase transition up to this pressure. The temperature dependence of the spin lattice relaxation rate 1/T1 at 4.9 GPa still exhibits an activation-type temperature dependence characteristic of semiconductors, which reveals an obvious decrease in the insulating gap by about 30% compared to the gap at ambient pressure. The present experimental facts of a finite insulator gap and no magnetic order at 4.9 GPa are consistent with recent transport measurements performed under better hydrostatic pressures.
- Publication:
-
Journal of Korean Physical Society
- Pub Date:
- June 2013
- DOI:
- 10.3938/jkps.62.2024
- Bibcode:
- 2013JKPS...62.2024N
- Keywords:
-
- SmB<SUB>6</SUB>;
- NMR intermediate valence;
- Kondo insulator;
- Pressure