Post-Irradiation-Gate-Stress on Power MOSFETs: Quantification of Latent Defects-Induced Reliability Degradation
Abstract
- Publication:
-
IEEE Transactions on Nuclear Science
- Pub Date:
- December 2013
- DOI:
- 10.1109/TNS.2013.2287974
- Bibcode:
- 2013ITNS...60.4166P