Experimental and Computational Analysis of Emission from Highly Ionized Si, Kr, Mo, Gd, and Tb Plasmas at 6.6 nm
Abstract
There is increasing interest in high-power extreme-ultraviolet (EUV) laser-based lamps for sub-10 nm lithography operating in the region of 6.6 nm based on the LaN/B4C multilayer mirrors for manufacturing the next generation of microelectronics. A detailed multilevel non-LTE atomic model is developed to investigate emissivity and absorption properties of highly ionized Si, Kr, Mo, Gd, and Tb plasmas at 6.6 nm. Experimental spectra are presented together with analysis based on calculations using the relativistic Flexible Atomic Code. We will present the optimum regions for conversion efficiency of mass-limited targets against target density and laser parameters by means of 1D hydrodynamic coupled to a developed population kinetics codes.
- Publication:
-
APS Division of Plasma Physics Meeting Abstracts
- Pub Date:
- October 2013
- Bibcode:
- 2013APS..DPPCO5002P