Group-III-nitride-based light-emitting diode on silicon substrate with epitaxial nanolayer of silicon carbide
Abstract
A light-emitting diode (LED) structure based on group III nitride has been grown for the first time on Si(111) substrate with SiC buffer nanolayer (50- to 200-nm-thick) obtained by solid-phase epitaxy. This LED structure is characterized by record low (<108 cm‑2) density of lattice misfit dislocations at a total dislocation density of ∼8 × 108 cm‑2. The photo- and electroluminescence spectra of obtained structures have been measured.
- Publication:
-
Technical Physics Letters
- Pub Date:
- March 2012
- DOI:
- 10.1134/S1063785012030261
- Bibcode:
- 2012TePhL..38..297K
- Keywords:
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- Light Emit Diode;
- Technical Physic Letter;
- Misfit Dislocation;
- Scanning Electron Micro;
- Electroluminescence Spectrum