Engineering of Si-Rich Nitride Charge-Trapping Layer for Highly Reliable Metal-Oxide-Nitride-Oxide-Semiconductor Type NAND Flash Memory with Multi-Level Cell Operation
Abstract
The relationship between chemical structure (N/Si ratio) or physical structure (bilayer or laminate structure) of Si-rich nitride charge-trapping layer for metal-oxide-nitride-oxide-semiconductor (MONOS) type NAND flash memory and its electrical characteristics (including program/erase Vth window, fresh cell data retention and data retention after program/erase cycling stress) are investigated in detail. A bilayer charge-trapping structure formed by two different composite Si-rich nitride films has been developed that can realize a sufficient program/erase window and excellent data retention characteristics for multi-level cell (MLC) operation.
- Publication:
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Japanese Journal of Applied Physics
- Pub Date:
- February 2012
- DOI:
- 10.1143/JJAP.51.021103
- Bibcode:
- 2012JaJAP..51b1103F