Muli-state operation in quantum dot channel FETs incorporating spatial wavefunction-switching
Abstract
Three-state behavior has been demonstrated in Si and InGaAs quantum dot gate (QDG) field-effect transistors
ootnotetextS. Karmakar, et al., J. Electronic Materials, 40, 1746, 2011.^,
ootnotetextF Jain, J. Electronic Materials, 40, 1717, 2011. (FETs). Recently, spatial wavefunction switched
ootnotetextIbid. (SWS) and quantum dot channel
ootnotetextF. Jain et al., Proc. II-VI Workshop, Oct.2011. (QDC) FETs have been reported to exhibit four-state operation. This paper presents simulations of versatile combinations of SWS features in QDC channels to optimally design multi-state transport in FETs that have the potential of scaling to sub-12nm regime. A QDC-FET channel is modeled as having superlattice-like mini-energy bands where the carrier wavefunctions are transferred across the channel as drain voltage is changed, producing step-like multi-state electrical characteristics. This behavior is analogous to that of single electron transistors.
ootnotetextS. J. Shin, et al., Appl. Phys. Lett. 97, 103101, 2010. The difference is that QDC devices use more than a few electrons and operate at room temperature. The SWS feature additionally provides carrier transfer from lower to upper dot layer(s) in a QDC having more than one layer of quantum dots.
- Publication:
-
APS March Meeting Abstracts
- Pub Date:
- February 2012
- Bibcode:
- 2012APS..MART17007J