Next-generation Technologies for EUV Solar Imagers
Abstract
The Atmospheric Imaging Assembly (AIA) on board the Solar Dynamics Observatory has convincingly demonstrated the importance of obtaining high spatial ( 1 arc sec) and temporal ( 10 sec) resolution images of solar extreme ultraviolet (EUV) radiation from the transition region and corona. AIA full-disk observations indicate that such radiation is being generated by events or features at spatial scales ranging from large-sized events of several arc min (e.g., CMEs and related flares), to much smaller scales observed at the limits of the performance of AIA (e.g., moss and jet-like features). Although our understanding of the solar atmosphere has advanced as a consequence of these observations, furthering our knowledge of the detailed physics will require improved instrumentation, i.e., fabrication of higher performance EUV imaging telescopes with higher spatial resolution (Δθ ≤ 0.1 arc sec) and higher temporal resolution (Δt ≤ few sec), extending over previously un-observed wavelength ranges. Such improved technologies, which are currently under development, can be implemented in the next-generation EUV solar telescopes (for example, on the Solar-C or RAM missions). Herein, we report on the status of three technologies that have been investigated: development of super-polished SiC substrates useful for large-diameter EUV telescopes; development of a novel multilayer coating that produces high reflectivities above 300 Å and evaluation of new back-illuminated CMOS detector arrays capable of rapid EUV imaging.
- Publication:
-
American Astronomical Society Meeting Abstracts #220
- Pub Date:
- May 2012
- Bibcode:
- 2012AAS...22052205M