Lateral Junction Waveguide-Type Photodiode Grown on Semi-Insulating InP Substrate
Abstract
A lateral junction waveguide-type GaInAsP/InP photodetector was fabricated on a semi-insulating InP substrate by two-step organometallic vapor-phase epitaxy (OMVPE) regrowth. Responsivities of 0.9 A/W at 1500 nm and 0.27 A/W at 1550 nm were obtained. A 3-dB bandwidth of 6 GHz and 6-Gbps error-free operation under non-bias conditions were achieved with a stripe width of 1.4 µm and a device length of 220 µm.
- Publication:
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Japanese Journal of Applied Physics
- Pub Date:
- February 2011
- DOI:
- 10.1143/JJAP.50.020206
- Bibcode:
- 2011JaJAP..50b0206O