Development And Evaluation Of A SiC Schottky Diode For Harsh Environment Space Applications
Abstract
This paper reports on the development and evaluation of a 300V-5A SiC Schottky diode with a wide temperature operation range capability (-170oC to 270oC), to be used as blocking diode for solar array cells strings.
This work has been conducted in the frame of Bepicolombo technology development activities. In particular, the solar array design was considered the baseline for deriving the applicable electrical, reliability and environmental requirements. To extend the diodes' state of the art to this extended temperature range, different technological approaches have been considered, with mainly modifications in metallization layers and package processes. The diodes have been then submitted to ad-hoc evaluation program that was derived from ESCC 2265000 demonstrating high stability for a continuous operation at 270oC. This technological development was conducted by CNM under Thales Alenia Space - Turin contract.- Publication:
-
9th European Space Power Conference
- Pub Date:
- October 2011
- Bibcode:
- 2011ESASP.690E..97M