Fabrication of Direct Silicon Bonded Hybrid Orientation Substrate by Separation by Implanted Oxygen Layer Transfer and Oxide Dissolution Annealing
Abstract
The quasi direct Si bonded (DSB) hybrid orientation substrate with a 3 nm interfacial oxide layer between the (100) superficial Si and the (110) handle wafer is fabricated by the separation by implanted oxygen layer transfer (SLT) process. The quasi DSB hybrid orientation substrates are annealed in oxygen-containing and oxygen-free ambient. The cross-sectional transmission electron microscopy (XTEM) results show the oxide-free (100) Si/(110) Si bonding interface, indicating that the direct Si-Si bonded structure is realized by these two processes. The anisotropic bonding interface morphology of the DSB hybrid orientation substrates is observed, and the formation mechanism is discussed in detail.
- Publication:
-
Applied Physics Express
- Pub Date:
- March 2011
- DOI:
- 10.1143/APEX.4.031301
- Bibcode:
- 2011APExp...4c1301W