Novel Damascene Gate Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated by In situ Arsenic- and Boron-Doped Epitaxy
Abstract
A new concept planar metal-oxide-semiconductor field-effect transistor (MOSFET) which was fabricated by in situ doped selective Si epitaxy, has been proposed. Owing to the ultra-shallow junction, the short-channel effects were improved, and the drive current was increased by the gate overlapped structure as well. The characteristics of this new concept MOSFET were improved compared with those of a conventional MOSFET because of improvements in short-channel effects and parasitic resistances.
- Publication:
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Japanese Journal of Applied Physics
- Pub Date:
- July 2010
- DOI:
- 10.1143/JJAP.49.071301
- Bibcode:
- 2010JaJAP..49g1301K