Improved Output Power of 380 nm InGaN-Based LEDs Using a Heavily Mg-Doped GaN Insertion Layer Technique
Abstract
- Publication:
-
IEEE Journal of Selected Topics in Quantum Electronics
- Pub Date:
- July 2009
- DOI:
- 10.1109/JSTQE.2009.2014778
- Bibcode:
- 2009IJSTQ..15.1132H