High permittivity SrHf0.5Ti0.5O3 films grown by pulsed laser deposition
Abstract
High permittivity SrHf0.5Ti0.5O3 films (k =62.8) have been deposited on (001) Nb-SrTiO3 single crystal conducting substrates by pulsed laser deposition. The SrHf0.5Ti0.5O3 films grow epitaxially with atomically smooth surfaces (root mean square roughness 4.8 Å) and a c-axis orientation parallel to the substrate. The measured band gap of SrHf0.5Ti0.5O3 is 3.47 eV compared with 3.15 eV in SrTiO3. Under an applied electric field of 600 kV/cm, the leakage current density of the SrHf0.5Ti0.5O3 films is 4.63×10-4 A/cm2. These attractive dielectric properties and enhanced band gap values make SrHf0.5Ti0.5O3 a promising candidate for high-k dielectric applications in silicon-based integrated circuits.
- Publication:
-
Applied Physics Letters
- Pub Date:
- June 2009
- DOI:
- 10.1063/1.3151815
- Bibcode:
- 2009ApPhL..94w2903Y
- Keywords:
-
- 77.55.+f;
- 77.22.Ch;
- 81.15.Fg;
- 71.20.Ps;
- 77.84.Dy;
- 68.35.bt;
- Dielectric thin films;
- Permittivity;
- Laser deposition;
- Other inorganic compounds;
- Niobates titanates tantalates PZT ceramics etc.;
- Other materials