Carrier dynamics in GaN at extremely low excited carrier densities
Abstract
Carrier dynamics in GaN was studied using fluorescence lifetime measurement in the frequency domain technique in the temperature range from 8 to 300 K at very low and very high excitation levels. The study was performed in a high-quality GaN epilayer exhibiting a room-temperature nonequilibrium carrier lifetime of 2 ns, which was determined by a light-induced transient grating (four-wave mixing) technique. The results reveal the roles of donor-acceptor pair recombination and conduction band-acceptor recombination in yellow luminescence band formation.
- Publication:
-
Solid State Communications
- Pub Date:
- February 2008
- DOI:
- 10.1016/j.ssc.2007.10.038
- Bibcode:
- 2008SSCom.145..312M