Electronic structures and p-d exchange interaction of Mn-doped diluted magnetic semiconductors
Abstract
Electronic structures of Mn-doped II-VI diluted magnetic semiconductors (DMSs) were studied by Mn2p core absorption (XAS), Mn2p core-level photoelectron (XPS), and Mn2p-3d resonance photoelectron spectroscopy (RPES). The Mn2p XAS, 2p XPS, and 2p-3d RPES spectra were analyzed by configuration-interaction theory based on the cluster model. We then obtained a strong negative p-d exchange constant between anion p bands and Mn3d orbitals for the wide gap DMSs Zn1-xMnxSe and Zn1-xMnxS . In contrast, for the narrow gap DMS Hg1-x-yCdxMnyTe , we found a weak negative p-d exchange constant. By comparing these results with the results of the previous work, we found that the p-d exchange constant in wide and narrow gap II-VI DMSs is proportional to the absolute band-gap energy. This phenomenon can be interpreted by the change in the density of states of anion p bands, which hybridized with the Mn3d orbitals, at the valence-band maximum. These results suggest that one can control the p-d exchange interaction in DMSs by changing the band-gap energy.
- Publication:
-
Physical Review B
- Pub Date:
- November 2008
- DOI:
- 10.1103/PhysRevB.78.205206
- Bibcode:
- 2008PhRvB..78t5206U
- Keywords:
-
- 75.50.Pp;
- 81.05.Dz;
- 79.60.-i;
- Magnetic semiconductors;
- II-VI semiconductors;
- Photoemission and photoelectron spectra