Structural modification of C-doped SiO 2 induced by swift heavy ion irradiations
Abstract
Thermally grown amorphous SiO2 samples were implanted at room temperature (RT) with 120 keV C-ions to a dose ranging from 1.0 × 1016 to 8.6 × 1017C ions/cm2, then irradiated at RT with 950 MeV Pb, 345 or 1754 MeV Xe ions to a fluence in the region from 1.0 × 1011 to 3.8 × 1012 ions/cm2, respectively. The irradiated samples were investigated using micro-FTIR and micro-Raman spectroscopes. It was found that new chemical bonds such as Si-C, Cdbnd C(O), Ctbnd C and Si(C)-O-C bonds formed significantly in the C-doped SiO2 films after heavy ion irradiations. The evolution of Si-O-C bonds and possible mechanism of structural modification in C-doped SiO2 induced by swift heavy ion irradiations were discussed.
- Publication:
-
Nuclear Instruments and Methods in Physics Research B
- Pub Date:
- March 2007
- DOI:
- 10.1016/j.nimb.2006.12.071
- Bibcode:
- 2007NIMPB.256..288W
- Keywords:
-
- Swift heavy ion irradiations;
- C-doped SiO<SUB>2</SUB>;
- Structural modification;
- FTIR and Raman spectroscopes;
- 61.80.Jh;
- 61.72.Ww;
- 78.30.-j;
- Ion radiation effects;
- Doping and impurity implantation in other materials;
- Infrared and Raman spectra
