Writing properties of clad lines in a toggle MRAM
Abstract
We examined the magnetic and writing properties of clad writing lines for magnetic random access memory (MRAM) devices. After fabricating them, we applied a magnetic field of 1.2 T to them at room temperature. We call this operation initialization. Initialization reduced the flop current deviation of the single magnetic tunnel junction toggle cells. We fabricated a 4-Mbit toggle memory array with the clad lines, using initialization. It exhibited a large operating margin and a reduced switching current.
- Publication:
-
Journal of Magnetism and Magnetic Materials
- Pub Date:
- 2007
- DOI:
- 10.1016/j.jmmm.2006.10.974
- Bibcode:
- 2007JMMM..310E.933M