Epitaxial Ferromagnet on Ge(111) : Mn5Ge3
Abstract
Magnetic materials used for recording and reading information involve the use of the electron spin, while semiconducting devices normally take advantage of the electron charge. Recently, a big effort has been made in adding the spin degree of freedom to conventional semiconductors. A good potential candidate for spin injection in a silicon- compatible semiconductor are Mn5Ge3 thin films on Ge(111) [1]. To further gain information on the usefulness of possible spintronics applications of Mn5Ge3/Ge(111) multilayers angle resolved photoemission spectroscopy (ARPES) was employed to map the band dispersion of Mn5Ge3 films on Ge(111) above and below the Curie temperature. Furthermore, we performed temperature dependent x-ray magnetic dichroism measurements of Mn5Ge3 films on Ge(111) to probe the magnetic properties of Mn5Ge3. [1] C. Zeng et al., Appl. Phys. Lett. 83, 5002 (2003).
- Publication:
-
APS March Meeting Abstracts
- Pub Date:
- March 2006
- Bibcode:
- 2006APS..MARZ20006H