Heat-treating effect on the properties of Pb1-xLax(Zr0.4Ti0.6)O3 ferroelectric thin film prepared by a modified sol-gel process

2 mol% Lanthanum doped lead zirconate titanate Pb(Zr_0.4Ti _0.6)O₃ ferroelectric thin film were successfully deposited by a modified sol-gel method on(111) Pt/Ti/SiO₂/Si(100) substrate, the effect of heat-treatment on the properties of microstructure and ferroelectric was investigated. It is shown that deposited on (111)Pt lead to (111) preferred orientation. The PLZT thin film annealing at 700°C show good ferroelctric properties with a large remnant polarization of 40μ C/cm₂, a spontaneous polarization of 75.7μ C/cm₂, and a coercive field of 112kV/cm under an electric field of 650kV/cm. The dielectric constant increased with annealing temperature.