1.55 μm InGaAsP/InP tapered stripe superluminescent diodes with potential optical sensor system applications
Abstract
We proposed a structure of a 1.55 μm InGaAsP/InP superluminescent diode (SLD) to suppress the lasing action and fabricated laterally tilted multi-quantum well planar buried heterostructure separate confinement heterostructure SLD by using MOCVD and LPE equipments. The fabricated SLD is laterally tilted by 15°. The output power of SLD was 11 mW for 200 mA under pulse driving. The full-width at half-maximum was 42 nm at 200 mA.
- Publication:
-
Optics Laser Technology
- Pub Date:
- April 2004
- DOI:
- 10.1016/j.optlastec.2003.09.008
- Bibcode:
- 2004OptLT..36..255K
