Flexible high capacitance gate insulators for organic field effect transistors
Abstract
We have manufactured flexible field effect transistors with both polymeric and low molecular weight organic semiconductors onto a very thin (6.5 nm) gate insulator with capacitance in excess of 600 nF cm-2. Gate insulators were prepared by anodization of a sputtered aluminium film on a Mylar plastic sheet. Anodization protocols in very dilute acid and in pure water, were explored and results compared.
- Publication:
-
Journal of Physics D Applied Physics
- Pub Date:
- January 2004
- DOI:
- 10.1088/0022-3727/37/1/005
- Bibcode:
- 2004JPhD...37...21M