Radiolytic Hydrogen Sources in Silicon Dioxide
Abstract
Radiation studies on bipolar transistors have shown that gain degradation increases as the dose rate is reduced for a given total dose of ionizing radiation. This effect may be caused by competing reactions involving hydrogen released from oxide sites by the ionizing radiation. At low dose rates, most of the hydrogen reacts with hydrogen-passivated Si dangling bonds at the semiconductor-oxide interface to create interface traps (Pb-centers), but at higher dose rates less hydrogen reaches interface traps due to competing reactions. In this presentation, hydrogen sources and release mechanisms will be discussed with a focus on the role of mechanical strain. Our results are obtained from electronic structure calculations (SeqQuest) on supercell models of silicon dioxide and its interface with silicon. These results show that strain may increase the concentration of hydrogen source sites.
- Publication:
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APS March Meeting Abstracts
- Pub Date:
- March 2004
- Bibcode:
- 2004APS..MARZ21010H