Coverage dependence of the desorption dynamics of hydrogen from the Si (100) surface
Abstract
We^ have studied the coverage (Θ ) dependence of D2 desorption from the Si(100) surface by time-of-flight (TOF) measurement. The translational energy tends to^ weakly decrease with increasing Θ . It is revealed that desorption through 2H or 2H* process mainly takes place at low coverage, and 4H process takes place at high coverage around Θ =1ML. Two rates along the 2H (2H*) and 4H processes cross over at 0.9 ML. Our result seems to support recent theoretical model for the interdimer mechanism, but 2H-4H crossing over occurs at much higher coverages than its prediction. The coverage dependence of the mean energy barrier (E_0) and distribution of barrier widths (W) were estimated from the analysis using the principle of detailed balance.
- Publication:
-
APS March Meeting Abstracts
- Pub Date:
- March 2004
- Bibcode:
- 2004APS..MAR.K1024M