Characterization of nano-sized Si islands in buried oxide layer of SIMOX by conducting AFM
Abstract
In this Letter, we present a study on mapping the morphology of the top interface on Si/buried oxide (BOX) in nanometer scale and the influence of nano-sized Si islands to the electronic properties of the BOX layer in separation by implantation of oxygen with conducting atomic force microscopy (C-AFM). By using C-AFM, both the morphology of the top interface on Si/BOX and the electronic properties of the BOX can be obtained simultaneously. Based on the analysis of the current-voltage ( I- V) curves, the electronic properties of the BOX are also discussed.
- Publication:
-
Chemical Physics Letters
- Pub Date:
- July 2003
- DOI:
- 10.1016/S0009-2614(03)01071-6
- Bibcode:
- 2003CPL...376..748C