Silicon-Germanium Nanostructures for Quantum Dot Qubits
Abstract
Spin based qubits in silicon provide a promising architecture for quantum computing. A scalable design for silicon-germanium quantum dot qubits is presented, including the status of its physical implementation. The design incorporates vertical and lateral tunneling into quantum dots defined by nanostructured top gates in the 2DEG of a strained Si quantum well. Simulations of a four-qubit array indicate that the design will enable single electron occupation of each dot of a many-dot array. Performing two-qubit operations has negligible effect on other qubits in the array. Simulation results are used to translate error correction requirements into specifications for gate-voltage electronics. This translation is a necessary link between error correction theory and device physics. We also present experimental results: X-ray diffraction data demonstrate 87% relaxation in SiGe cladding layers, TEM images show low threading dislocation density in the quantum well containing the 2DEG, and preliminary electrical measurements are presented. Research supported by ARO, ARDA, and NSF.
- Publication:
-
APS March Meeting Abstracts
- Pub Date:
- March 2003
- Bibcode:
- 2003APS..MARY19011S