Properties of Epitaxial MgB2 Films Grown by HPCVD
Abstract
Recently, we have demonstrated that the high quality epitaxial MgB2 films can be fabricated by a new method of Hybrid Physical-Chemical Vapor Deposition (HPCVD). In this report, the results of the studies of the deposition conditions influence on the MgB2 film properties are presented. A comparison is made of the structural, normal state and superconducting properties of the films deposited on Al_2O_3, 4H-SiC and 6H-SiC substrates. Epitaxial MgB2 films grown in situ by HPCVD have high values of T_c, J_c, H_c2, RRR, low resistivity and smooth surface.
- Publication:
-
APS March Meeting Abstracts
- Pub Date:
- March 2003
- Bibcode:
- 2003APS..MARX20001P