Decay of DySi2 nanowires on Si(001)

Nanowires of DySi2 were formed on a Si(001) substrate through room temperature (RT) deposition of 3 nm of dysprosium and annealing at 700° C. Real time imaging of the formation, growth and decay of the silicide nanowires was observed by photo electron emission microscopy (PEEM). We report on the decay of the nanowires at different temperatures between 700 and ∼1000° C. At high temperatures, the Dy evaporates from the surface, and the wires eventually disappear. Upon annealing, we observe that the nanowire width remains constant while the length decreases with time. At some point, they then sequentially break in sections, and we speculate that the breaks correspond to misfit dislocations.