Influence of 1×1 defects on Schottky barrier height at the Ag/Si(111)7×7 interface
Abstract
We examined the influence of 1×1 defects at the Si(111)7×7 surface on the Schottky barrier height (SBH) of the Ag/Si interface. By quenching samples from high temperatures, we intentionally introduced 1×1 defects on Si(111) 7×7 surfaces. After characterizing the area of the 1×1 defects by scanning tunneling microscope, we deposited Ag films in situ at room temperature on the surfaces and measured the SBH. As the 1×1 area increased from 0 to 50 %, SBH increased from 0.60 eV to 0.66 eV. The 1×1 area dependence of the SBH was caused by a locally high SBH in the 1×1 area with the pinch-off area extending around it.
- Publication:
-
Physical Review B
- Pub Date:
- August 2002
- DOI:
- 10.1103/PhysRevB.66.073301
- Bibcode:
- 2002PhRvB..66g3301H
- Keywords:
-
- 73.30.+y;
- 72.20.-i;
- 73.50.-h;
- 73.20.-r;
- Surface double layers Schottky barriers and work functions;
- Conductivity phenomena in semiconductors and insulators;
- Electronic transport phenomena in thin films;
- Electron states at surfaces and interfaces