Laser-Induced Photoluminescence Enhancement in a Room-Temperature Emitting SiGe-Based Alloy Quantum Well
Abstract
An enhancement of photoluminescence (PL) intensity was observed at room temperature in a SiGe/Si quantum well under continuous laser illumination. The laser-induced PL enhancement was found to be an irreversible process characterized by a time constant which decreases with increasing excitation power density. A modified defect reduction model based on recombination-enhanced defect reaction is invoked to interpret the PL enhancement in terms of an improvement in the crystal quality of quantum well layers induced by laser radiation.
- Publication:
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Japanese Journal of Applied Physics
- Pub Date:
- December 2002
- Bibcode:
- 2002JaJAP..41.1449H