Mathematical simulation of the traveling heater method growth of ternary semiconductor materials under suppressed gravity conditions
Abstract
Results of a numerical simulation study for the traveling heater method (THM) growth of single crystals are presented. It is found that the position of the thermal profile has a profound effect on the characteristics and stability of the growing crystal. To suppress the convective flow in the solution, various levels of the applied magnetic field and the magnetic field misalignment were considered. Results indicate that there is an upper limit of the level of misalignment above which the growth interface may lose its stability. The convective flow due to such misalignment gives rise to a mixing in the horizontal plane, which is beneficial for the growth process. A fixed field of about 2 T is sufficient to reduce the effect of gravity significantly.
- Publication:
-
Journal of Crystal Growth
- Pub Date:
- April 2002
- DOI:
- 10.1016/S0022-0248(01)02208-4
- Bibcode:
- 2002JCrGr.237.1876L