A two dimensional modeling of an rf magnetron plasma for sputtering
Abstract
newcommandčt[1] #1 A magnetron discharge at low pressure is well-known tool for deposition of various kinds of thin films by using ion sputtering on a target. In previous papers, we have developed a hybrid model for a dc magnetron discharge for material sputtering[1]. In order to deposit dielectric films by using the physical mechanism of the ion sputtering of a dielectric target material, a radio frequency source will be required for sustaining the magnetron plasma. In this study, we present a two dimensional hybrid model, consisting of a particle model of electrons and relaxation continuum model of massive ions for an rf magnetron plasma for sputtering. It is known that the electron shows a very complicated transport even in a uniform čtE × čtB field[2]. Under these circumstances, Monte Carlo simulation has a benefit of simplicity though it is time consuming. In this study we discuss the results of 2D plasma structure, I-V characteristics, and the ion energy distribution incident on the target, etc. Especially the incident ion energy distribution is one of the key parameters of physical sputtering and deposition. [1] E.Shidoji, E.Ando, and T.Makabe, Plasma Sources Sci. Technol. 8, 621(2001), E.Shidoji, H.Ohtake, N.Nakano, and T.Makabe, Jpn. J. Appl. Phys. 38, 2131(1999). [2] K.Ness and T.Makabe, Phys.Rev.E 62, 4083(2000), Z.Raspopovic, S.Sakadzic, Z.Lj.Petrovic, and T.Makabe, J.Phys.D 33, 1298(2000).
- Publication:
-
APS Annual Gaseous Electronics Meeting Abstracts
- Pub Date:
- October 2002
- Bibcode:
- 2002APS..GECQWP044M