Signature of an intrinsic point defect in GaNxAs1-x
Abstract
The first experimental signature of an intrinsic defect in GaNAs is provided from an optically detected magnetic resonance study. The resolved central hyperfine structure identifies the defect with a nuclear spin I=3/2, containing either an AsGa antisite or a Ga interstitial. From the strength of the hyperfine interaction and the growth conditions, a complex involving the AsGa antisite seems to be a more likely candidate.
- Publication:
-
Physical Review B
- Pub Date:
- January 2001
- DOI:
- 10.1103/PhysRevB.63.033203
- Bibcode:
- 2001PhRvB..63c3203T
- Keywords:
-
- 76.70.Hb;
- 71.55.Eq;
- 61.72.Ji;
- Optically detected magnetic resonance;
- III-V semiconductors;
- Point defects and defect clusters