Optical and Electrical Characteristics of CO2-Laser-Treated Mg-Doped GaN Film

This work investigates the optical and electrical characteristics of CO₂-laser annealed Mg-doped GaN films to activate Mg-doped p-type GaN films. Results obtained from the CO₂ laser annealing investigation were similar to those of thermal annealing or low energy electron beam irradiation (LEEBI) treatment to activate the Mg-doped p-GaN films. The room-temperature photoluminescence (PL) intensity of the blue emission of the Mg-doped GaN film after 10 W laser annealing was approximately ten times stronger than that of the as-grown film. The resistivity of the Mg-doped GaN film decreased from 10⁵ Ω{\cdot}cm to 2-3 Ω{\cdot}cm as the laser annealing power rose above 6 W@. The hole concentration of Mg-doped GaN film was approximately 1× 10¹⁷ cm^-3 when the laser annealing power was 7.5 W.