The action of XeCl*-laser radiation on temperature dependence of porous silicon luminescence integral intensity (in English)
Abstract
For the first time a possibility to influence on the shape of temperature dependence of integral intensity of luminescence I_{lum}(T) in the region of orange-red luminescence band for the por-Si samples by UV-irradiation has been demonstrated. In the type 1 samples two spectral components have been elucidated, each differently reacting on the UV-irradiation phase and on the temperature change. It is concluded that different shapes of the I_{lum}(T) dependence previously observed on various samples by a varying groups of investigators is stipulated by different active contribution into the resulting shape of the short-wavelength (L) and long-wavelength (M) luminescence bands and, possibly, other emission bands. The nature of the UV irradiation influence on the I_{lum}(T) dependencies is analysed.
- Publication:
-
Journal of Physical Studies
- Pub Date:
- 2000
- Bibcode:
- 2000JPhSt...4...78B