Magnetotunneling Between Two InAs Quantum Wells
Abstract
We have observed strong oscillations in the tunneling conductance of InAs/AlSb/GaSb/AlSb/InAs heterostructures in magnetic fields up to 14T and in the 1.6K to 8K temperature range. We interpret this result as evidence of tunneling between Landau levels of the two-dimensional (2D) electron gases formed at the InAs/AlSb interfaces. The current-voltage characteristics show negative-differential-resistance features consistent with this explanation. The origin of the 2D carriers is the intrinsic transfer of electrons from the valence band of the GaSb quantum well (typically 60 Åwide) to the conduction band of the InAs electrodes, as confirmed by the observed decrease in the number of carriers when the heterostructures are under hydrostatic pressure up to 11kbar.
- Publication:
-
APS March Meeting Abstracts
- Pub Date:
- March 2000
- Bibcode:
- 2000APS..MARE17014S