Defect-induced Si/Ge intermixing on the Ge/Si(100) surface
Abstract
Si/Ge interfacial intermixing phenomena have often been observed in epitaxial Ge overlayer growth on Si surfaces. Yet, it is not clear if this Si/Ge intermixing originates from an energetically favorable configuration or from nonequilibrium growth conditions. Using the first-principles calculations we propose a model of defect-induced Si/Ge intermixing that is both energetically and kinetically favorable. We further discuss the intermixing phenomena at stepped Si surfaces.
- Publication:
-
Physical Review B
- Pub Date:
- April 1999
- DOI:
- 10.1103/PhysRevB.59.9764
- Bibcode:
- 1999PhRvB..59.9764Z
- Keywords:
-
- 68.35.Ct;
- 81.05.Hd;
- 68.35.Md;
- 82.65.Dp;
- Interface structure and roughness;
- Other semiconductors;
- Surface thermodynamics surface energies